Naršyti pagal temą "p-n junctions"
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Adaptability of majority carrier concentration permanence assumption in modelling of the p-n junction-based semiconductor devices
(2015 Open Conference of Electrical, Electronic and Information Sciences (eStream), April 21, 2015, Vilnius, Lithuania, 2015)The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge ...