Now showing items 1-1 of 1

    • Studies of response of metal-porous silicon structures to microwave radiation 

      Stupakova, Jolanta; Ašmontas, Steponas; Gradauskas, Jonas; Zagadskij, Viktor; Šatkovskis, Eugenijus (XXXV international school on the physics of semiconducting compounds (Jaszowiec 2006): program & abstracts: Ustroń - Jaszowiec, Poland, June 17-23, 2006, 2006)
      The evolution of the I - V characteristics within the temperature range (77 - 295) °K was tested, and can be explained sufficiently by the dependence of hole mobility in silicon on temperature. Response of the structures ...