dc.contributor.author | Gradauskas, Jonas | |
dc.contributor.author | Ašmontas, Steponas | |
dc.date.accessioned | 2023-09-18T16:08:35Z | |
dc.date.available | 2023-09-18T16:08:35Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2076-3417 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/111730 | |
dc.description.abstract | Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character. Its rise is based on the hot carrier phenomenon; no carrier generation is present, only redistribution of laser-heated carriers takes place at the semiconductor surface. The magnitude of this displacement current is related to the capacitance of the structure and is dependent on the rate of the laser pulse change as well as on the laser light intensity. This effect can find application in the detection of fast infrared laser pulses as well as in the development of infrared photovaractors. Operation of such devices would not require cryogenic temperatures what is usually needed by the long-wavelength infrared semiconductor technique. | eng |
dc.format | PDF | |
dc.format.extent | p. 1-7 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.relation.isreferencedby | Scopus | |
dc.rights | Laisvai prieinamas internete | |
dc.source.uri | https://doi.org/10.3390/app11167211 | |
dc.source.uri | https://talpykla.elaba.lt/elaba-fedora/objects/elaba:101662155/datastreams/MAIN/content | |
dc.title | Hot carrier photocurrent through MOS structure | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.accessRights | This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). | |
dcterms.license | Creative Commons – Attribution – 4.0 International | |
dcterms.references | 25 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.studydirection | C02 - Fizika / Physics | |
dc.subject.studydirection | E09 - Elektronikos inžinerija / Electronic engineering | |
dc.subject.vgtuprioritizedfields | AE0404 - Atsinaujinanti energija / Renewable energy | |
dc.subject.ltspecializations | L102 - Energetika ir tvari aplinka / Energy and a sustainable environment | |
dc.subject.en | infrared laser | |
dc.subject.en | MOS | |
dc.subject.en | hot carriers | |
dc.subject.en | semiconductor | |
dc.subject.en | capacitance | |
dc.subject.en | photovaractor | |
dcterms.sourcetitle | Applied sciences | |
dc.description.issue | iss. 16 | |
dc.description.volume | vol. 11 | |
dc.publisher.name | MDPI | |
dc.publisher.city | Basel | |
dc.identifier.doi | 000688581900001 | |
dc.identifier.doi | 10.3390/app11167211 | |
dc.identifier.elaba | 101662155 | |