| dc.contributor.author | Žurauskienė, Nerija | |
| dc.contributor.author | Pavilonis, Dainius | |
| dc.contributor.author | Balevičius, Saulius | |
| dc.contributor.author | Stankevič, Voitech | |
| dc.contributor.author | Maneikis, Andrius | |
| dc.contributor.author | Plaušinaitienė, Valentina | |
| dc.contributor.author | Novickij, Jurij | |
| dc.date.accessioned | 2023-09-18T16:16:48Z | |
| dc.date.available | 2023-09-18T16:16:48Z | |
| dc.date.issued | 2015 | |
| dc.identifier.issn | 0093-3813 | |
| dc.identifier.other | (BIS)LBT02-000055504 | |
| dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/112625 | |
| dc.description.abstract | The results of fast resistance relaxation of nanostructured La1-xCaxMnO3 (LCMO) films with different compositions x (0.218, 0.285, 0.296, 0.41) grown by the metal-organic chemical vapor deposition technique are presented. The fast (~200μs) resistance relaxation process observed after the magnetic field pulse was switched off was studied in pulsed fields up to 14 T in the temperature range of 80-170 K. It was found that the remnant resistivity of the fast relaxation process is proportional to the magnetoresistance of the films up to 10 T. The smallest remnant relaxation values were found for the films with highest insulator-metal transition temperature Tm. It was shown that the fast process could be analyzed using the Kolmogorov-Avrami-Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. It was concluded that LCMO films with x=0.218 should be favored for the development of fast pulsed magnetic field sensors operating at cryogenic temperatures. | eng |
| dc.format | PDF | |
| dc.format.extent | p. 3445-3450 | |
| dc.format.medium | tekstas / txt | |
| dc.language.iso | eng | |
| dc.relation.isreferencedby | IEEE Xplore | |
| dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
| dc.subject | MC02 - Elektros ir elektroniniai įrenginiai bei sistemos / Electrical and electronic devices and systems | |
| dc.title | Fast resistance relaxation in nanostructured La-Ca-Mn-O films in pulsed magnetic fields | |
| dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
| dcterms.references | 32 | |
| dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
| dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
| dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
| dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
| dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
| dc.subject.researchfield | N 002 - Fizika / Physics | |
| dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
| dc.subject.en | Colossal magnetoresistance (CMR) | |
| dc.subject.en | Magnetic field sensors | |
| dc.subject.en | Manganites | |
| dc.subject.en | Resistance relaxation processes | |
| dc.subject.en | Thin films | |
| dcterms.sourcetitle | IEEE transactions on plasma science | |
| dc.description.issue | no. 10 | |
| dc.description.volume | Vol. 43 | |
| dc.publisher.name | IEEE | |
| dc.identifier.doi | 10.1109/TPS.2015.2424162 | |
| dc.identifier.elaba | 11885364 | |
