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80-dB microwave noise from an avalanche transistor circuit

dc.contributor.authorMykolaitis, Gytis
dc.contributor.authorKeršulis, Skirmantas
dc.contributor.authorBumelienė, Skaidra
dc.contributor.authorTamaševičius, Arūnas Vytautas
dc.date.accessioned2023-09-18T16:16:49Z
dc.date.available2023-09-18T16:16:49Z
dc.date.issued2015
dc.identifier.issn1392-1215
dc.identifier.other(BIS)LBT02-000055507
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/112634
dc.description.abstractExtremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only ± 1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated.eng
dc.formatPDF
dc.format.extentp. 40-43
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyINSPEC
dc.relation.isreferencedbyVINITI
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttp://eejournal.ktu.lt/index.php/elt/article/view/13324
dc.subjectMC02 - Elektros ir elektroniniai įrenginiai bei sistemos / Electrical and electronic devices and systems
dc.title80-dB microwave noise from an avalanche transistor circuit
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references17
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltspecializationsL104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies
dc.subject.enBipolar transistor circuits
dc.subject.enMicrowave transistors
dc.subject.enAvalanche breakdown
dc.subject.enNoise generators
dcterms.sourcetitleElektronika ir elektrotechnika
dc.description.issueno.5
dc.description.volumeVol. 21
dc.publisher.nameTechnologija
dc.publisher.cityKaunas
dc.identifier.doi10.5755/j01.eee.21.5.13324
dc.identifier.elaba11887994


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