dc.contributor.author | Cicėnas, Paulius | |
dc.contributor.author | Geižutis, Andrejus | |
dc.contributor.author | Malevich, V.L. | |
dc.contributor.author | Krotkus, Arūnas | |
dc.date.accessioned | 2023-09-18T16:17:01Z | |
dc.date.available | 2023-09-18T16:17:01Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 0146-9592 | |
dc.identifier.other | (BIS)LBT02-000055648 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/112712 | |
dc.description.abstract | We report on terahertz (THz) emission from a (111)-cut InAs crystal in the reflection and transmission directions, excited by femtosecond optical pulses in the direction of its surface normal. THz pulse amplitudes emitted from the crystal surface in this case were only ∼20% smaller than for optimal photoexcitation at a 45° angle. This observation evidences that THz emission from InAs is caused by lateral photocurrent transients appearing due to a crystal anisotropy rather than directly by the photo-Dember effect, which creates fast changing electric polarization perpendicular to the surface. Such a simple geometry of the photoexcitation could greatly enhance the fields of surface THz emitter applications. | eng |
dc.format | PDF | |
dc.format.extent | p. 5164-5167 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.source.uri | https://doi.org/10.1364/OL.40.005164 | |
dc.subject | MC05 - Pažangios konstrukcinės ir daugiafunkcinės medžiagos, nanodariniai / Innovative constructive and multifunctional materials, nanostructures | |
dc.title | Terahertz radiation from an InAs surface due to lateral photocurrent transients | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.references | 18 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Institute of Physics National Academy of Sciences of Belarus ITMO University | |
dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
dc.subject.en | Picosecond phenomena | |
dc.subject.en | Semiconductor materials | |
dc.subject.en | Optoelectronics | |
dc.subject.en | Sources | |
dcterms.sourcetitle | Optics letters | |
dc.description.issue | iss.22 | |
dc.description.volume | Vol. 40 | |
dc.publisher.name | Optical Society of America | |
dc.publisher.city | Washington | |
dc.identifier.doi | 000366133400010 | |
dc.identifier.doi | 10.1364/OL.40.005164 | |
dc.identifier.elaba | 13432595 | |