N-tipo akytojo silicio darinių jautrio tyrimas

Abstract

Darbe pateikta galimybė aptikti impulsinę mikrobangų spinduliuotę per sidabro, silicio oksido ar akytojo silicio struktūras ir analizuojamos galimos fizinės priežastys, dėl kurių kyla elektrovaros įtampos signalas. N-tipo akytieji sluoksniai buvo pagaminti pasirinkus įprastą elektrocheminio ėsdinimo procedūrą ir veikiami impulsine 10 GHz mikrobangų spinduliuote. Tyrimo rezultatai rodo, kad darinių, turinčių akytojo silicio sluoksnių, įtampos ir galios jautris yra viena dviem eilėmis didesnis nei bandinių, neturinčių akytojo sluoksnio, ir galima manyti, kad šie dariniai turi potencialą jį didinti toliau. Laisvųjų krūvininkų kaitinimo reiškinys yra pagrindas signalui susidaryti

The possibilities of detecting microwave radiation using porous silicon (PSi) derivatives were investigated. Porous silicon layers were formed by electrochemical etching of n-type 1 Ω·cm resistivity (100) oriented silicon wafers in HF:C2 H5 OH:H2 O = 1:1:1 solution. After the etching process, the upper nano porous layer was cleaned with 5% KOH aqueous solution, the samples were washed with distilled water and dried. 10 GHz frequency modulated rectangular pulses with a repetition rate of 100 Hz and a maximum pulse power of 3 W were emitted for the excitation of the PSi specimens. The paper presents the possibility of detecting pulsed microwave radiation through silver/silicon oxide/porous silicon structures and analyses the possible physical causes of the electromotive voltage signal. The n-type porous layers were fabricated by a conventional electrochemical etching procedure and exposed to pulsed 10 GHz microwave radiation. The research results show that the voltage and power sensitivity of samples with porous silicon layers is at least one to two orders of magnitude higher than that of samples without a porous layer, and it is believed that they have great potential to increase it further. The phenomenon of heating of free carriers is considered to be responsible for the generation of the signal. The conclusions presented in the work are that a narrower contact radius causes stronger heating of the hot charge carriers and induces a higher value electric motor; and sensitive samples with porous silicon layers are several orders of magnitude higher than crystalline silicon samples.