Interface modes in semiconductor terahertz layer structures

Abstract

We address and explain the occurrence of interface modes in GaAs/AlAs semiconductor layer structures. Interface modes are tied to the existence of a surface, i. e. interface between two media of certain dielectric properties. We have assigned the transverse-magnetic interface modes by solutions of the surface polariton dispersion relations for semiconductor layer structures. Derivations employ full phenomenological electromagnetic description and are based on fundamental defining equations of the electromagnetic field and wave propagation theory.