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Electron noise charge minimization in 130 nm CMOS preamplifiers

dc.contributor.authorBarzdėnas, Vaidotas
dc.contributor.authorNavickas, Romualdas
dc.date.accessioned2023-09-18T17:01:46Z
dc.date.available2023-09-18T17:01:46Z
dc.date.issued2007
dc.identifier.other(BIS)VGT02-000016403
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/119105
dc.format.extentp. 81
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titleElectron noise charge minimization in 130 nm CMOS preamplifiers
dc.typeKonferencijos pranešimo santrauka / Conference presentation abstract
dcterms.references4
dc.type.pubtypeT2 - Konferencijos pranešimo tezės / Conference presentation abstract
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.enHybrid pixel sensors
dc.subject.enCharge sensitive preamplifier (CSP)
dc.subject.en130 nm CMOS technology
dc.subject.enElectron noise charge
dcterms.sourcetitle13th International symposium on ultrafast phenomena in semiconductors. Vilnius, Lihuania, 26-29 August, 2007 : abstracts / Semiconductor Physics Institute (Lithuania), Institute of Physics. Polish Academy of Science, Physikalisches Institut der Johann Wolfgang Goethe-Universität
dc.publisher.nameSemiconductor Physics Institute
dc.publisher.cityVilnius
dc.identifier.elaba3816568


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