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dc.contributor.authorBalevičius, Saulius
dc.contributor.authorTornau, Evaldas
dc.contributor.authorŽurauskienė, Nerija
dc.contributor.authorStankevič, Voitech
dc.contributor.authorŠimkevičius, Česlovas
dc.contributor.authorTolvaišienė, Sonata
dc.contributor.authorPlaušinaitienė, Valentina
dc.contributor.authorAbrutis, Adulfas
dc.date.accessioned2023-09-18T17:03:07Z
dc.date.available2023-09-18T17:03:07Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.other(BIS)LBT02-000058503
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/119321
dc.description.abstractWe present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4–8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.eng
dc.formatPDF
dc.format.extentp. art. no. 213901 [1-9]
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttps://doi.org/10.1063/1.4998232
dc.subjectMC02 - Elektros ir elektroniniai įrenginiai bei sistemos / Electrical and electronic devices and systems
dc.titleMagnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references48
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus universitetas
dc.contributor.institutionVilniaus universitetas
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.researchfieldT 008 - Medžiagų inžinerija / Material engineering
dc.subject.ltspecializationsL104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies
dc.subject.enMagnetic ordering
dc.subject.enEpitaxy
dc.subject.enMagnetic field sensors
dc.subject.enThin films
dc.subject.enGarnet
dcterms.sourcetitleJournal of applied physics
dc.description.issueiss. 21
dc.description.volumeVol. 122
dc.publisher.nameAIP Publishing
dc.publisher.cityMelville
dc.identifier.doi10.1063/1.4998232
dc.identifier.elaba24869294


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