dc.contributor.author | Kundrotas, Algis Jurgis | |
dc.contributor.author | Čerškus, Aurimas | |
dc.contributor.author | Valušis, Gintaras | |
dc.contributor.author | Lachab, M. | |
dc.contributor.author | Khanna, Suraj P | |
dc.contributor.author | Harrisoncan, Paul | |
dc.contributor.author | Linfield, Edmund | |
dc.date.accessioned | 2023-09-18T17:06:16Z | |
dc.date.available | 2023-09-18T17:06:16Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 0587-4246 | |
dc.identifier.other | (BIS)VGT02-000016580 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/119626 | |
dc.description.abstract | We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3 × 1012 cm-2. | eng |
dc.format.extent | p. 963-966 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Conference Proceedings Citation Index - Science (Web of Science) | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.source.uri | http://przyrbwn.icm.edu.pl/APP/PDF/113/a113z339.pdf | |
dc.title | Radiative recombination spectra, of heavily p-type δ-doped GaAs/AlAs MQWs | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.accessRights | IDS Number: 279JH | |
dcterms.references | 7 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas Puslaidininkių fizikos institutas | |
dc.contributor.institution | Puslaidininkių fizikos institutas | |
dc.contributor.institution | University of Leeds | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.lt | Be δ-legiruotas GaAs/AlAs | |
dc.subject.lt | Kvantinės duobės | |
dc.subject.lt | Fotoliuminescencija | |
dc.subject.lt | 2D Mott pernaša | |
dc.subject.lt | Dvimatės skylių dujos | |
dc.subject.en | Be δ-doped GaAs/AlAs | |
dc.subject.en | Quantum wells | |
dc.subject.en | Photoluminescence | |
dc.subject.en | 2D Mott transition | |
dc.subject.en | 2D hole gas | |
dcterms.sourcetitle | Acta Physica Polonica A | |
dc.description.issue | no. 3 | |
dc.description.volume | Vol. 113 | |
dc.publisher.name | Polish Academy of Sciences | |
dc.publisher.city | Warszawa | |
dc.identifier.doi | LBT02-000029997 | |
dc.identifier.doi | 000254351000039 | |
dc.identifier.elaba | 3820313 | |