dc.contributor.author | Vengalis, Bonifacas | |
dc.contributor.author | Šliužienė, Kristina | |
dc.contributor.author | Lisauskas, Vaclovas | |
dc.contributor.author | Grigaliūnaitė-Vonsevičienė, Gražina | |
dc.contributor.author | Butkutė, Rita | |
dc.contributor.author | Lygaitis, Ramūnas | |
dc.contributor.author | Gražulevičius, Juozas Vidas | |
dc.date.accessioned | 2023-09-18T17:27:26Z | |
dc.date.available | 2023-09-18T17:27:26Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0587-4246 | |
dc.identifier.other | (BIS)KTU02-000045744 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/123348 | |
dc.description.abstract | We report fabrication and electrical characterization of the organic inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively. | eng |
dc.format | PDF | |
dc.format.extent | p. 262-264 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.relation.isreferencedby | Scopus | |
dc.source.uri | http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p53.pdf | |
dc.title | Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.references | 6 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Puslaidininkių fizikos institutas | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Puslaidininkių fizikos institutas | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Kauno technologijos universitetas | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | T 008 - Medžiagų inžinerija / Material engineering | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.lt | organiniai puslaidininkiai | |
dc.subject.lt | organinių plonųjų sluoksnių tranzistoriai | |
dc.subject.lt | krūvininkų judris | |
dc.subject.lt | voltamperinė charakteristika | |
dc.subject.en | organic semiconductors | |
dc.subject.en | organic thin film transistors | |
dc.subject.en | mobility of carriers | |
dc.subject.en | current voltage characteristics | |
dcterms.sourcetitle | Acta physica Polonica A | |
dc.description.issue | iss. 2 | |
dc.description.volume | vol. 119 | |
dc.publisher.name | Polish academy of sciences | |
dc.publisher.city | Warsaw | |
dc.identifier.doi | LBT02-000041987 | |
dc.identifier.doi | VGT02-000022425 | |
dc.identifier.doi | 2-s2.0-79751475937 | |
dc.identifier.doi | 000287288500054 | |
dc.identifier.doi | 10.12693/APhysPolA.119.262 | |
dc.identifier.elaba | 3150271 | |