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Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si

dc.contributor.authorVengalis, Bonifacas
dc.contributor.authorŠliužienė, Kristina
dc.contributor.authorLisauskas, Vaclovas
dc.contributor.authorGrigaliūnaitė-Vonsevičienė, Gražina
dc.contributor.authorButkutė, Rita
dc.contributor.authorLygaitis, Ramūnas
dc.contributor.authorGražulevičius, Juozas Vidas
dc.date.accessioned2023-09-18T17:27:26Z
dc.date.available2023-09-18T17:27:26Z
dc.date.issued2011
dc.identifier.issn0587-4246
dc.identifier.other(BIS)KTU02-000045744
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/123348
dc.description.abstractWe report fabrication and electrical characterization of the organic inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.eng
dc.formatPDF
dc.format.extentp. 262-264
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.relation.isreferencedbyScopus
dc.source.urihttp://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p53.pdf
dc.titleFabrication and study of the organic-inorganic semiconductor diodes formed on n-Si
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references6
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Puslaidininkių fizikos institutas
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.institutionKauno technologijos universitetas
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 008 - Medžiagų inžinerija / Material engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltorganiniai puslaidininkiai
dc.subject.ltorganinių plonųjų sluoksnių tranzistoriai
dc.subject.ltkrūvininkų judris
dc.subject.ltvoltamperinė charakteristika
dc.subject.enorganic semiconductors
dc.subject.enorganic thin film transistors
dc.subject.enmobility of carriers
dc.subject.encurrent voltage characteristics
dcterms.sourcetitleActa physica Polonica A
dc.description.issueiss. 2
dc.description.volumevol. 119
dc.publisher.namePolish academy of sciences
dc.publisher.cityWarsaw
dc.identifier.doiLBT02-000041987
dc.identifier.doiVGT02-000022425
dc.identifier.doi2-s2.0-79751475937
dc.identifier.doi000287288500054
dc.identifier.doi10.12693/APhysPolA.119.262
dc.identifier.elaba3150271


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