Attenuation phenomena in gyroelectric waveguides with anisotropic dielectric layer

Abstract

Models of gyroelectric GaAs waveguides with temperature sensitive anisotropic dielectric layer are presented in this paper. The influence of density of free carriers and temperature to the EM waves attenuation of gyroelectric n and p GaAs waveguides is evaluated. Differential Maxwell’s equations, coupled mode and partial area methods, coherent approaching, least square methods were used in order to obtain complex dispersion equations of models of gyroelectric waveguides with temperature sensitive anisotropic dielectric. The analysis of models of gyroelectric waveguides with temperature sensitive anisotropic dielectric shows that different effects and exceptions occur in nGaAs and p-GaAs waveguides with external dielectric layers. Different effects and exceptions especially occur in cases, when were are relatively high density of impurities N = 5*10^19 and 10^20 m–3 and limit temperatures T =125 K as well as 200 K. The attenuation of electromagnetic waves is higher for n-GaAs compared with p-GaAs waveguides, because electrons are characterized by a lower effective mass and higher mobility in comparison with holes.