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Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions

dc.contributor.authorGradauskas, Jonas
dc.contributor.authorŠirmulis, Edmundas
dc.contributor.authorAšmontas, Steponas
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorDashevsky, Z.
dc.contributor.authorKasiyan, V.
dc.date.accessioned2023-09-18T18:35:27Z
dc.date.available2023-09-18T18:35:27Z
dc.date.issued2011
dc.identifier.issn0587-4246
dc.identifier.other(BIS)VGT02-000022422
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/129637
dc.description.abstractWe report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.eng
dc.format.extentp. 237-240
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttp://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p45.pdf
dc.titlePeculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.accessRightsIDS Number: 720NX
dcterms.references21
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionBen-Gurion University of the Negev, Beer-Sheva, Israel
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 006 - Energetika ir termoinžinerija / Energy and thermoengineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltFotoįtampa
dc.subject.ltKarštieji krūvininkai
dc.subject.ltInfraraudonasis detektavimas
dc.subject.ltSiauratarpis puslaidininkis
dc.subject.enPhotovoltage
dc.subject.enHot carriers
dc.subject.enInfrared detection
dc.subject.enNarrow-gap semiconductor
dcterms.sourcetitleActa Physica Polonica A. 14th International Symposium on Ultrafast Phenomena in Semiconductors. Vilnius, Lithuania, August 23-25, 2010
dc.description.issueno. 2
dc.description.volumeVol. 119
dc.publisher.namePolish Academy of Sciences
dc.publisher.cityWarszawa
dc.identifier.doiLBT02-000041941
dc.identifier.doi000287288500046
dc.identifier.elaba3935110


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