dc.contributor.author | Bičiūnas, Andrius | |
dc.contributor.author | Geižutis, Andrejus | |
dc.contributor.author | Krotkus, Arūnas | |
dc.date.accessioned | 2023-09-18T18:38:17Z | |
dc.date.available | 2023-09-18T18:38:17Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0013-5194 | |
dc.identifier.other | (BIS)VGT02-000022563 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/129888 | |
dc.description.abstract | A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, photoconductive emitters made using a low-temperature-grown (LTG) GaAs layer annealed at different temperatures, and a photoconductive detector made using a Si-doped GaBiAs epitaxial layer, has been demonstrated. Useful spectral bandwidth of the system, that might be used in spectroscopy experiments, was up to 3 THz and its dynamical range exceeded 50 dB when the LTG GaAs emitter annealed at 420 degrees C was used. It has been concluded that the breakdown field of as-grown layers is much larger than that of annealed layers; this process provides rather large optical-to-THz radiation conversion efficiencies for the emitters made from moderately annealed LTG GaAs. | eng |
dc.format | PDF | |
dc.format.extent | p. 130-132 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | IEEE Xplore | |
dc.relation.isreferencedby | INSPEC | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.source.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5700016 | |
dc.title | Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.references | 8 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.lt | Optoelektroninės terahercų sistemos | |
dc.subject.lt | Žemoje temperatūroje augintas GaAs | |
dc.subject.lt | GaBiAs | |
dc.subject.lt | Jonais implantuotas InGaAs | |
dc.subject.en | Optoelectronic terahertz systems | |
dc.subject.en | LTG GaAs | |
dc.subject.en | GaBiAs | |
dc.subject.en | Ion-implanted InGaAs | |
dcterms.sourcetitle | Electronics letters | |
dc.description.issue | iss. 2 | |
dc.description.volume | Vol. 47 | |
dc.publisher.name | Institut Engineering Technology | |
dc.publisher.city | Stevenage, England | |
dc.identifier.doi | LBT02-000042638 | |
dc.identifier.doi | 10.1049/el.2010.3024 | |
dc.identifier.elaba | 3938702 | |