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Peculiarities of excitonic photoluminescence in Si δ-Doped GaAs structures

dc.contributor.authorNargelienė, Viktorija
dc.contributor.authorAšmontas, Steponas
dc.contributor.authorČerškus, Aurimas
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorKundrotas, Algis Jurgis
dc.contributor.authorSužiedėlis, Algirdas
dc.date.accessioned2023-09-18T18:38:20Z
dc.date.available2023-09-18T18:38:20Z
dc.date.issued2011
dc.identifier.issn0587-4246
dc.identifier.other(BIS)VGT02-000022566
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/129921
dc.description.abstractWe present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.eng
dc.format.extentp. 177-179
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttp://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p26.pdf
dc.titlePeculiarities of excitonic photoluminescence in Si δ-Doped GaAs structures
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.accessRightsIDS Number: 720NX
dcterms.references13
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Puslaidininkių fizikos institutas
dc.contributor.institutionLietuvos edukologijos universitetas Puslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltδ-legiruotas GaAs
dc.subject.ltFotoliuminescencija
dc.subject.ltEksitonai
dc.subject.enδ-doped GaAs
dc.subject.enPhotoluminescence
dc.subject.enExcitons
dcterms.sourcetitleActa Physica Polonica A. 14th International Symposium on Ultrafast Phenomena in Semiconductors. Vilnius, Lithuania, August 23-25, 2010
dc.description.issueno. 2
dc.description.volumeVol. 119
dc.publisher.namePolish Academy of Sciences
dc.publisher.cityWarszawa
dc.identifier.doiLBT02-000041848
dc.identifier.doiVPU02-000008523
dc.identifier.doi000287288500027
dc.identifier.elaba3938854


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