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Influence of hole recombination rate on microwave detection in compensated germanium

dc.contributor.authorAšmontas, Steponas
dc.contributor.authorBumelienė, Skaidra
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorSeliuta, Dalius
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorValušis, Gintaras
dc.date.accessioned2023-09-18T18:50:16Z
dc.date.available2023-09-18T18:50:16Z
dc.date.issued2002
dc.identifier.issn0255-5476
dc.identifier.other(BIS)VGT02-000004818
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/132484
dc.description.abstractWe report on carrier heating phenomena study in compensated germanium irradiated by microwave electric field. The microwave detection in p-p+ junction of compensated germanium was studied on the base of phenomenological theory and verified experimentally. The comparison of experimental results of electrical conductivity change of compensated germanium in microwavw electric field with that of Hall measurements as well as with theoretical estimations revealed the field dependence of hole recombination rate in compensated germanium.eng
dc.formatPDF
dc.format.extentp. 143-146
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyConference Proceedings Citation Index - Science (Web of Science)
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttps://www.scientific.net/MSF.384-385.143
dc.titleInfluence of hole recombination rate on microwave detection in compensated germanium
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references8
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.enMicrowave detection
dc.subject.enHole heating
dc.subject.enHole recombination rate
dc.subject.enDeep gold levels in germanium
dcterms.sourcetitleMaterials science forum. Ultrafast phenomena in semiconductors 2001. 11th International Symposium on Ultrafast Phenomena in Semiconductors, Aug 27-29, 2001 Vilnius, Lithuania
dc.description.volumevol. 384-385
dc.publisher.nameTrans Tech. Publications LTD
dc.publisher.cityZurich
dc.identifier.doiLBT02-000000070
dc.identifier.doi000174536100025
dc.identifier.doi10.4028/www.scientific.net/MSF.384-385.143
dc.identifier.elaba3616004


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