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dc.contributor.authorNavickas, Romualdas
dc.contributor.authorČiulada, Rimas
dc.date.accessioned2023-09-18T18:53:00Z
dc.date.available2023-09-18T18:53:00Z
dc.date.issued2002
dc.identifier.issn1392-124X
dc.identifier.other(BIS)VGT02-000005063
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/132667
dc.description.abstractA model of the evolution of masks in the process of underetching (lateral etching) layers is created for analysis and design of new technologies semiconductor devices and integrated circuits. The results of the simulation are given for different configurations, speeds and etching selectivity of masks.eng
dc.format.extentp. 65-68
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titleDesign of the masks for the self-alignment technologies of integrated circuits
dc.typeStraipsnis kitame recenzuotame leidinyje / Article in other peer-reviewed source
dc.type.pubtypeS4 - Straipsnis kitame recenzuotame leidinyje / Article in other peer-reviewed publication
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dcterms.sourcetitleInformacinės technologijos ir valdymas
dc.description.issuenr. 4(25)
dc.publisher.nameTechnologija
dc.publisher.cityKaunas
dc.identifier.elaba3619839


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