Express measurements of electrical properties of semiconductors in a pulsed magnetic field

Abstract

The progress of electrical engineering and electronics has demanded the application of new materials in device design. New technological processes allows to obtain thin films, monocrystal and policrystal samples of modern semiconductor materials. Electrical parameters of semiconductors should be tested constantly to provide the high quality of semiconductor devices. In this area express methods for testing electrical properties of semiconductors are successfully used. The main requirement for devices using for express testing is a short time of measurements. Testing large batches of semiconductor samples, the simple operation of the device and the quick replacement of tested samples are very actual. Sometimes the compromise is done to obtain a quick testing of semiconductors instead precise measurements. Relative errors of ± (10 to 20) % are acceptable for express measurements in most cases of non-destructive testing. Often high frequency resonators and microstrip lines are applied for express measurements of electrical properties of semiconductors because of their simple operation. A high frequency field of these devices is interacted with charge carriers of semiconductor sample and contactless measurements of resistivity, concentration, mobility of free charge carriers of semiconductors can be realized.