| dc.contributor.author | Jankauskas, Zigmantas | |
| dc.contributor.author | Kvedaras, Vygaudas | |
| dc.contributor.author | Balevičius, Saulius | |
| dc.date.accessioned | 2023-09-18T19:22:30Z | |
| dc.date.available | 2023-09-18T19:22:30Z | |
| dc.date.issued | 2004 | |
| dc.identifier.issn | 0217-9792 | |
| dc.identifier.other | (BIS)VGT02-000010198 | |
| dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/138513 | |
| dc.description.abstract | Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator. | eng |
| dc.format | PDF | |
| dc.format.extent | p. 3825-3829 | |
| dc.format.medium | tekstas / txt | |
| dc.language.iso | eng | |
| dc.relation.isreferencedby | Conference Proceedings Citation Index - Science (Web of Science) | |
| dc.relation.isreferencedby | Compendex | |
| dc.relation.isreferencedby | Academic Search Premier | |
| dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
| dc.source.uri | http://dx.doi.org/doi:10.1142/S0217979204027530 | |
| dc.title | Raman scattering in the magnetized semiconductor plasma | |
| dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
| dcterms.references | 0 | |
| dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
| dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
| dc.contributor.institution | Puslaidininkių fizikos institutas | |
| dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
| dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
| dcterms.sourcetitle | International Journal of Modern Physics B | |
| dc.description.issue | no 27-29 | |
| dc.description.volume | Vol. 18 | |
| dc.publisher.name | World Scientific | |
| dc.publisher.city | Singapore | |
| dc.identifier.doi | 000227140200071 | |
| dc.identifier.doi | 10.1142/S0217979204027530 | |
| dc.identifier.elaba | 3700617 | |