Rodyti trumpą aprašą

dc.contributor.authorJankauskas, Zigmantas
dc.contributor.authorKvedaras, Vygaudas
dc.contributor.authorBalevičius, Saulius
dc.date.accessioned2023-09-18T19:22:30Z
dc.date.available2023-09-18T19:22:30Z
dc.date.issued2004
dc.identifier.issn0217-9792
dc.identifier.other(BIS)VGT02-000010198
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/138513
dc.description.abstractRadio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.eng
dc.formatPDF
dc.format.extentp. 3825-3829
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyConference Proceedings Citation Index - Science (Web of Science)
dc.relation.isreferencedbyCompendex
dc.relation.isreferencedbyAcademic Search Premier
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.source.urihttp://dx.doi.org/doi:10.1142/S0217979204027530
dc.titleRaman scattering in the magnetized semiconductor plasma
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references0
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dcterms.sourcetitleInternational Journal of Modern Physics B
dc.description.issueno 27-29
dc.description.volumeVol. 18
dc.publisher.nameWorld Scientific
dc.publisher.citySingapore
dc.identifier.doi000227140200071
dc.identifier.doi10.1142/S0217979204027530
dc.identifier.elaba3700617


Šio įrašo failai

FailaiDydisFormatasPeržiūra

Su šiuo įrašu susijusių failų nėra.

Šis įrašas yra šioje (-se) kolekcijoje (-ose)

Rodyti trumpą aprašą