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Phonon sidebands in photoluminescence of beryllium delta-doped GaAs/AlAs multiple quantum wells

dc.contributor.authorKundrotas, Algis Jurgis
dc.contributor.authorČerškus, Aurimas
dc.contributor.authorJohannessen, Agnė
dc.contributor.authorAšmontas, Steponas
dc.contributor.authorValušis, Gintaras
dc.contributor.authorHalsall, Matthew P.
dc.contributor.authorHarrison, Paul
dc.date.accessioned2023-09-18T19:55:04Z
dc.date.available2023-09-18T19:55:04Z
dc.date.issued2006
dc.identifier.other(BIS)VGT02-000015637
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/144875
dc.format.extentp. 36
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titlePhonon sidebands in photoluminescence of beryllium delta-doped GaAs/AlAs multiple quantum wells
dc.typeKonferencijos pranešimo santrauka / Conference presentation abstract
dc.type.pubtypeT2 - Konferencijos pranešimo tezės / Conference presentation abstract
dc.contributor.institutionVilniaus Gedimino technikos universitetas Puslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionUniversity of Manchester
dc.contributor.institutionUniversity of Leeds
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dcterms.sourcetitleAdvanced optical materials and devices : 5th international conference: program and abstracts: Vilnius, Lithuania, 27-30 August, 2006 / Semiconductors Physics Institute, The International Society for Optical Engineering
dc.publisher.nameSemiconductors Physics Institute
dc.publisher.cityVilnius
dc.identifier.elaba3799432


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