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Radiative recombination spectra of heavily p-type δ-doped GaAs/AIAs MQWs

dc.contributor.authorKundrotas, Algis Jurgis
dc.contributor.authorČerškus, Aurimas
dc.contributor.authorValušis, Gintaras
dc.contributor.authorLachab, M.
dc.contributor.authorKhanna, Suraj
dc.contributor.authorHarrison, Paul
dc.contributor.authorLinfield, Edmund
dc.date.accessioned2023-09-18T19:55:06Z
dc.date.available2023-09-18T19:55:06Z
dc.date.issued2007
dc.identifier.other(BIS)VGT02-000015638
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/144880
dc.format.extentp. 32
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titleRadiative recombination spectra of heavily p-type δ-doped GaAs/AIAs MQWs
dc.typeKitos konferencijų pranešimų santraukos / Other conference presentation abstracts
dc.type.pubtypeT3 - Kitos konferencijos pranešimo tezės / Other conference presentation abstracts
dc.contributor.institutionVilniaus Gedimino technikos universitetas Puslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionUniversity of Leeds
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dcterms.sourcetitle13 th International Symposium on Ultrafast Phenomena in Semiconductors, August 26-29, 2007 Vilnius, Lithuania: abstracts
dc.publisher.cityVilnius
dc.identifier.elaba3799575


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