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Time-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors

dc.contributor.authorČerškus, Aurimas
dc.contributor.authorNargelienė, Viktorija
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorAšmontas, Steponas
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorKundrotas, Benas
dc.contributor.authorRinkevičienė, Roma
dc.date.accessioned2023-09-18T20:02:52Z
dc.date.available2023-09-18T20:02:52Z
dc.date.issued2014
dc.identifier.issn1392-1320
dc.identifier.other(BIS)VGT02-000028755
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/146164
dc.description.abstractThe time-resolved photoluminescence of donor Si-doped GaAs/AlxGa1-xAs (x = 0.3 0.25, 0.2, 0.1) structures designed for microwave and terahertz detectors have been investigated at T = 3.6 K temperature. The excitonic, impurity and defect related emission lifetimes are revealed for these structures. Possible mechanisms of carrier recombination are discussed. Concentration of acceptor, carbon and silicon, are evaluated from measured lifetimes in the structures.eng
dc.formatPDF
dc.format.extentp. 132-134
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.relation.isreferencedbyScopus
dc.relation.isreferencedbyVINITI
dc.relation.isreferencedbyINSPEC
dc.source.urihttp://matsc.ktu.lt/index.php/MatSc/article/view/6317
dc.source.urihttp://www.matsc.ktu.lt/index.php/MatSc/article/view/6317
dc.subjectFM02 - Energijos šaltinių medžiagos ir technologijos / Materials and technologies of energy sources
dc.titleTime-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references11
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionVilniaus Gedimino technikos universitetas Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.facultyMechanikos fakultetas / Faculty of Mechanics
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldT 008 - Medžiagų inžinerija / Material engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltspecializationsL102 - Energetika ir tvari aplinka / Energy and a sustainable environment
dc.subject.enGaAs
dc.subject.enAlGaAs
dc.subject.enHeterostructures
dc.subject.enPhotoluminescence
dc.subject.enLifetime
dc.subject.enExciton
dc.subject.enTime-resolved photoluminescence
dcterms.sourcetitleMaterials science = Medžiagotyra
dc.description.issueno. 2
dc.description.volumeVol. 20
dc.publisher.nameTechnologija
dc.publisher.cityKaunas
dc.identifier.doiLBT02-000051149
dc.identifier.doi10.5755/j01.ms.20.2.6317
dc.identifier.elaba4085088


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