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Hot electron effect in degenerate semiconductor tunnel junction

dc.contributor.authorAšmontas, Steponas
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorPetkun, Valerij
dc.contributor.authorSeliuta, Dalius
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorUrbelis, Antanas
dc.date.accessioned2023-09-18T20:20:58Z
dc.date.available2023-09-18T20:20:58Z
dc.date.issued2004
dc.identifier.other(BIS)LBT02-000011079
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/149150
dc.format.extentp. 46
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.source.urihttp://www.pfi.lt/conf/ufps/ufps12/pdf/Asmon_tunnel.pdf
dc.titleHot electron effect in degenerate semiconductor tunnel junction
dc.typeKitos konferencijų pranešimų santraukos / Other conference presentation abstracts
dcterms.references2
dc.type.pubtypeT3 - Kitos konferencijos pranešimo tezės / Other conference presentation abstracts
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dcterms.sourcetitle12th international symposium on ultrafast phenomena in semiconductors : abstracts : August 22-25, 2004, Vilnius, Lithuania
dc.publisher.cityVilnius
dc.identifier.elaba5392294


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