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The boundary conditions of the junction taking into account high-level injection

dc.contributor.authorBaškys, Algirdas
dc.date.accessioned2023-09-18T20:21:08Z
dc.date.available2023-09-18T20:21:08Z
dc.date.issued2013
dc.identifier.other(BIS)LBT02-000048724
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/149180
dc.format.extentp. 61
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titleThe boundary conditions of the junction taking into account high-level injection
dc.typeKonferencijos pranešimo santrauka / Conference presentation abstract
dcterms.references2
dc.type.pubtypeT2 - Konferencijos pranešimo tezės / Conference presentation abstract
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.enP-n junction
dc.subject.enHigh-speed semiconductor devices
dc.subject.enHigh-level injection
dc.subject.enBoundary conditions
dcterms.sourcetitle15th International symposium on ultrafast phenomena in semiconductors : abstracts : Vilnius, Lithuania, August 25-28, 2013
dc.publisher.nameSemiconductor Physics Institute
dc.publisher.cityVilnius
dc.identifier.elaba6018530


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