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Radiative recombination spectra of heavily p-type δ-doped GaAs/AlAs MQWs

dc.contributor.authorKundrotas, Algis Jurgis
dc.contributor.authorČerškus, Aurimas
dc.contributor.authorValušis, Gintaras
dc.contributor.authorLachab, M.
dc.contributor.authorKhanna, S.P.
dc.contributor.authorHarrison, P.
dc.contributor.authorLinfield, E.H.
dc.date.accessioned2023-09-18T20:28:20Z
dc.date.available2023-09-18T20:28:20Z
dc.date.issued2007
dc.identifier.other(BIS)LBT02-000028520
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/149995
dc.format.extentp. 32
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.titleRadiative recombination spectra of heavily p-type δ-doped GaAs/AlAs MQWs
dc.typeKonferencijos pranešimo santrauka / Conference presentation abstract
dcterms.references0
dc.type.pubtypeT2 - Konferencijos pranešimo tezės / Conference presentation abstract
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionUniversity of Leeds
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltBe δ-legiruotas GaAs/AlAs
dc.subject.ltKvantinės duobės
dc.subject.ltFotoliuminescencija
dc.subject.lt2D Mott pernaša
dc.subject.ltDvimatės skylių dujos
dc.subject.enBe δ-doped GaAs/AlAs
dc.subject.enQuantum wells
dc.subject.enPhotoluminescence
dc.subject.en2D Mott transition
dc.subject.en2D hole gas
dcterms.sourcetitle13th International symposium on ultrafast phenomena in semiconductors : abstracts : 26-29 August, 2007 Vilnius, Lithuania
dc.publisher.nameSemiconductor Physics Institute
dc.publisher.cityVilnius
dc.identifier.elaba5762200


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