| dc.contributor.author | Baškys, Algirdas | |
| dc.contributor.author | Bleizgys, Vytautas | |
| dc.date.accessioned | 2023-09-18T20:28:31Z | |
| dc.date.available | 2023-09-18T20:28:31Z | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 1811-4512 | |
| dc.identifier.other | (BIS)LBT02-000031578 | |
| dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/150092 | |
| dc.description.abstract | The equation, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the junctions. The concrete silicon p-n junctions have been analyzed using derived equations. | eng |
| dc.format.extent | p. 26-29 | |
| dc.format.medium | tekstas / txt | |
| dc.language.iso | eng | |
| dc.title | Adaptibility of the majority carrier concentration permanence assumption in modeling of the junctions | |
| dc.type | Straipsnis kitame recenzuotame leidinyje / Article in other peer-reviewed source | |
| dcterms.references | 5 | |
| dc.type.pubtype | S4 - Straipsnis kitame recenzuotame leidinyje / Article in other peer-reviewed publication | |
| dc.contributor.institution | Puslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas | |
| dc.contributor.faculty | Elektronikos fakultetas / Faculty of Electronics | |
| dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
| dc.subject.lt | P-n perėjimas | |
| dc.subject.lt | Puslaidininkiniai prietaisai | |
| dc.subject.en | P-n junction | |
| dc.subject.en | Semiconductor devices | |
| dcterms.sourcetitle | Электроника и связь | |
| dc.description.issue | № 1-2 | |
| dc.identifier.doi | VGT02-000024565 | |
| dc.identifier.elaba | 5794836 | |
