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Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice

dc.contributor.authorNedzinskas, Ramūnas
dc.contributor.authorČechavičius, Bronislovas
dc.contributor.authorKavaliauskas, Julius
dc.contributor.authorKarpus, Vytautas
dc.contributor.authorSeliuta, Dalius
dc.contributor.authorTamošiūnas, Vincas
dc.contributor.authorValušis, Gintaras
dc.contributor.authorFasching, G.
dc.contributor.authorUnterrainer, K.
dc.contributor.authorStrasser, G.
dc.date.accessioned2023-09-18T20:28:58Z
dc.date.available2023-09-18T20:28:58Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.other(BIS)LBT02-000037162
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/150244
dc.description.abstractOptical transitions in vertically stacked InAs quantum dot (QD) superlattice (SL) with and without AlAs barriers were examined by photo- and electroreflectance techniques. The interband transitions corresponding to the QD, wetting layer (WL), and InAs/GaAs/AlAs SL have been identified. Experimental data and numerical calculations show that blueshifts and enhancement in the intensity of WL-related optical transitions in an InAs/GaAs/AlAs SL originate mainly due to off-center position of the QD layers in the quantum wells. The appearance of multiple WL-related features in the modulated reflectance spectra was revealed and discussed.eng
dc.formatPDF
dc.format.extent[p. 1-5]
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.relation.isreferencedbyINSPEC
dc.relation.isreferencedbyChemical abstracts
dc.relation.isreferencedbyGeoRef
dc.relation.isreferencedbyCompendex
dc.source.urihttps://doi.org/10.1063/1.3212980
dc.titleModulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references34
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas Vilniaus universitetas
dc.contributor.institutionViena University of Technology
dc.contributor.institutionUniversity of Buffalo, New York
dc.subject.researchfieldT 008 - Medžiagų inžinerija / Material engineering
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltModuliuotas atspindys
dc.subject.ltGaAs/AlAs supergardelės
dc.subject.ltKvantiniai taškai
dc.subject.enModulated reflectance
dc.subject.enGaAs/AlAs superlattice
dc.subject.enQuantum dot
dcterms.sourcetitleJournal of applied physics
dc.description.issueiss. 6
dc.description.volumeVol. 106
dc.identifier.doiVUB02-000034132
dc.identifier.doi10.1063/1.3212980
dc.identifier.elaba5854219


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