dc.contributor.author | Ašmontas, Steponas | |
dc.contributor.author | Fedorenko, L. | |
dc.contributor.author | Vlasiuk, V. | |
dc.contributor.author | Gorbanyuk, T. | |
dc.contributor.author | Kostylyov, V. | |
dc.contributor.author | Lytovchenko, V. | |
dc.contributor.author | Gradauskas, Jonas | |
dc.contributor.author | Sužiedėlis, Algirdas | |
dc.contributor.author | Širmulis, Edmundas | |
dc.contributor.author | Žalys, Ovidijus Alfonsas | |
dc.contributor.author | Masalskyi, Oleksandr | |
dc.date.accessioned | 2023-09-18T20:36:13Z | |
dc.date.available | 2023-09-18T20:36:13Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 1609-1833 | |
dc.identifier.other | (WOS_ID)000603544500006 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/151250 | |
dc.description.abstract | The surface of a silicon solar cell is modified to improve its photovoltaic characteristics. Nanostructured porous silicon layer is formed on a front n+ -type surface of a p–n junction by means of electrochemical etching accompanied by illumination with a high-power light-emitting diode operating at the wavelength of 365 nm. Addition of the porous layer results in considerable increase in the capacitive photovoltage across the p–n junction. This increase is shown to be stipulated by reduced photonic losses due to anti-reflection coating effect of the porous layer, as well as by decreasing adverse effect of hot carriers on the photovoltage. Broadening of the spectrum of capacitive photovoltage towards the short-wavelength region was observed. This finding is associated with the gradedgap character of the porous layer and photovoltage formation across it as well as with increased absorption of high-energy photons in the porous layer and resulting weaker heating of free carriers. | eng |
dc.format | PDF | |
dc.format.extent | p. 207-214 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.relation.isreferencedby | Scopus | |
dc.relation.isreferencedby | Chemical abstracts | |
dc.relation.isreferencedby | INSPEC | |
dc.relation.isreferencedby | VINITI | |
dc.source.uri | http://www.ifo.lviv.ua/journal/UJPO_PDF/2020_4/0604_2020.pdf | |
dc.source.uri | http://ifo.lviv.ua/journal/2020/2020_4_21_06.html | |
dc.subject | 00 - Klasifikacija netaikoma / Classification does not apply | |
dc.title | Suppression of hot carriers by nanoporous silicon for improved operation of a solar cell | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.references | 26 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.institution | National Academy of Sciences of Ukraine | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | |
dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.vgtuprioritizedfields | AE0404 - Atsinaujinanti energija / Renewable energy | |
dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
dc.subject.en | porous silicon | |
dc.subject.en | p-n junction | |
dc.subject.en | hot carriers | |
dc.subject.en | electrochemical etching | |
dc.subject.en | graded gap | |
dcterms.sourcetitle | Ukrainian journal of physical optics | |
dc.description.issue | iss. 4 | |
dc.description.volume | vol. 21 | |
dc.publisher.name | Vlokh Institute of Physical Optics | |
dc.publisher.city | Lviv | |
dc.identifier.doi | 000603544500006 | |
dc.identifier.doi | 10.3116/16091833/21/4/207/2020 | |
dc.identifier.elaba | 81631951 | |