dc.contributor.author | Gradauskas, Jonas | |
dc.contributor.author | Dzundza, Bohdan | |
dc.contributor.author | Chernyak, Leonid | |
dc.contributor.author | Dashevsky, Zinovy | |
dc.date.accessioned | 2023-09-18T20:38:29Z | |
dc.date.available | 2023-09-18T20:38:29Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 1424-8220 | |
dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/151549 | |
dc.description.abstract | A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time. The advantage of the sensor is that its operating temperature is high enough to be reached by a solid-state thermoelectric cooler. The sensor showed a specific detectivity value of 1010 cm·Hz1/2/W at a temperature of 150 K and a wavelength of 4.2 μm. The possibility to sense pulses of long-IR radiation by means of the PbTe diode was also demonstrated over the 100–180 K temperature range. For the first time, a two-photon absorption-caused photovoltaic effect was observed in PbTe at a wavelength of 9.5 μm at 150 K. | eng |
dc.format | PDF | |
dc.format.extent | p. 1-9 | |
dc.format.medium | tekstas / txt | |
dc.language.iso | eng | |
dc.relation.isreferencedby | Scopus | |
dc.relation.isreferencedby | Science Citation Index Expanded (Web of Science) | |
dc.relation.isreferencedby | DOAJ | |
dc.rights | Laisvai prieinamas internete | |
dc.source.uri | https://doi.org/10.3390/s21041195 | |
dc.source.uri | https://www.mdpi.com/1424-8220/21/4/1195 | |
dc.source.uri | https://talpykla.elaba.lt/elaba-fedora/objects/elaba:84729016/datastreams/MAIN/content | |
dc.subject | H600 - Elektronikos ir elektros inžinerija / Electronic and electrical engineering | |
dc.title | Two-color infrared sensor on the PbTe: In p-n junction | |
dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
dcterms.accessRights | This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/) | |
dcterms.license | Creative Commons – Attribution – 4.0 International | |
dcterms.references | 24 | |
dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
dc.contributor.institution | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas | |
dc.contributor.institution | Vasyl Stefanyk Precarpathian National University | |
dc.contributor.institution | University of Central Florida | |
dc.contributor.institution | Ben-Gurion University of the Negev | |
dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
dc.subject.researchfield | N 002 - Fizika / Physics | |
dc.subject.researchfield | T 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering | |
dc.subject.studydirection | C02 - Fizika / Physics | |
dc.subject.vgtuprioritizedfields | AE0404 - Atsinaujinanti energija / Renewable energy | |
dc.subject.ltspecializations | L104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies | |
dc.subject.en | infrared sensor | |
dc.subject.en | high-temperature PbTe photodiode | |
dc.subject.en | specific detectivity | |
dc.subject.en | two-photon absorption | |
dcterms.sourcetitle | Sensors | |
dc.description.issue | iss. 4 | |
dc.description.volume | vol. 21 | |
dc.publisher.name | MDPI | |
dc.publisher.city | Basel | |
dc.identifier.doi | 000624642100001 | |
dc.identifier.doi | 10.3390/s21041195 | |
dc.identifier.elaba | 84729016 | |