Investigation of parameters of band-pass filters on conductivity of p-Si and p-Ge semiconductors

Abstract

Wireless communication technologies, including 5G and others, require devices with a reconfigurable frequency range. Frequency selection is performed with the use of various band-pass filters. Structures of the microstrip band-pass filters are popular due to their small dimensions and a convenient procedure of manufacture. We have calculated design parameters of parallel-coupled half-wave band-pass filter by using transmission line theory. The obtained design parameters have been verified with Sonnetr and CST Microwave Studior software packages. We have chosen p-Si and p-Ge semiconductor substrates for the band-pass filter. The obtained 3.162–3.971 GHz passband is suitable for the 5G applications. The investigation has also showed that the electrical conductivity of the substrate has impact on the S-parameters of the band-pass filter. The passband of the band-pass filter becomes narrower with the increase of the electrical conductivity of the substrate.