Detecting microwave radiation on metal–porous silicon contacts

Abstract

We have studied the rise of electromotive force (emf) across ohmic and nonohmic metal–porous silicon contacts under the action of 10-GHz microwave radiation. It is established that emfs of opposite polarities with different growth (and decay) rates are generated across the contacts of different types. The emf growth across the potential barriers of contacts is explained using a model of the microwave-induced heating of charge carriers. It is shown that the use of a porous semiconductor layer is a promising way to increase the voltage–power responsivity of microwave detectors and eliminate the “point contact” effects.