Анизотропия свойств тонких проводящих пленок металлов
Data
1997Autorius
Žilinskas, Ramutis Antanas
Ivašauskas, Algis
Kleiza, Vytautas
Kleiza, Jonas
Metaduomenys
Rodyti detalų aprašąSantrauka
During the growth of thin conducting films on dielectric substrates under the action of an electric field E, a transverse voltage U/sub / occurs in the substrate plane. When the field E acts upon net-like or continuous films, U/sub / and the film resistance vary depending on the conductivity anisotropy angle γ. This is the phenomenon of uniaxial anisotropy with the measure of U/sub /. The direction of the light magnetization axis of ferromagnetic films φ/sub 0/ coincides with γ. In quasistatic remagnetization, the hysteresis loops of U/sub /(H) and B(H) are similar. The anisotropy of net-like and continuous films detected experimentally is described by tensorial conductivity. Appearance of the anisotropy depending on the film thickness is explained by a model in which properties of boundaries of the grains composing the film are determined by probabilities of charge carrier transport through the grain boundaries i/sub gx/≠i/sub gy/≠i/sub gz/, associated with the grain dimensions D/sub x/≠D/sub y/≠D/sub z/. In ferromagnetic films, additional charge carrier scattering from the domain walls occurs. During their magnetization, the conductivity tensor components either increase or decrease. It is shown that there is a relation between anisotropy of electric, magnetic, optical, and mechanical properties.