Анизотропия свойств тонких проводящих пленок металлов

Abstract

During the growth of thin conducting films on dielectric substrates under the action of an electric field E, a transverse voltage U/sub / occurs in the substrate plane. When the field E acts upon net-like or continuous films, U/sub / and the film resistance vary depending on the conductivity anisotropy angle γ. This is the phenomenon of uniaxial anisotropy with the measure of U/sub /. The direction of the light magnetization axis of ferromagnetic films φ/sub 0/ coincides with γ. In quasistatic remagnetization, the hysteresis loops of U/sub /(H) and B(H) are similar. The anisotropy of net-like and continuous films detected experimentally is described by tensorial conductivity. Appearance of the anisotropy depending on the film thickness is explained by a model in which properties of boundaries of the grains composing the film are determined by probabilities of charge carrier transport through the grain boundaries i/sub gx/≠i/sub gy/≠i/sub gz/, associated with the grain dimensions D/sub x/≠D/sub y/≠D/sub z/. In ferromagnetic films, additional charge carrier scattering from the domain walls occurs. During their magnetization, the conductivity tensor components either increase or decrease. It is shown that there is a relation between anisotropy of electric, magnetic, optical, and mechanical properties.