Pulsed microwave sensor on heavily doped semiconductor substrate

Abstract

Present increasing interest in high speed wireless communication and information transmission makes pulsed microwave (MW) power measurements to be a hot issue in the field of modern microwaves electronics. Well known Schottky junction-based or planar doped-barrier diodes have found application for pulsed microwave power measurements. However, complexity of these electronic devices encourages scientific and engineering community to pursue new original design of microwave diodes sensing short pulses of microwave radiation, and being cost effective at the same time. In this report we present two types of simple and low cost microwave detectors demonstrating competitive properties of pulsed millimeter wave power sensing.