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Pulsed microwave sensor on heavily doped semiconductor substrate

dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorAšmontas, Steponas
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorŠilėnas, Aldis
dc.contributor.authorLučun, Andžej
dc.contributor.authorČerškus, Aurimas
dc.contributor.authorPaškevič, Česlav
dc.contributor.authorŽalys, Ovidijus Alfonsas
dc.contributor.authorAnbinderis, Maksimas
dc.date.accessioned2023-09-18T17:06:25Z
dc.date.available2023-09-18T17:06:25Z
dc.date.issued2017
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/119671
dc.description.abstractDesign of unsophisticated cost-effective planar asymmetric microwave diode is proposed. Simplified technological process and use of simplex semiconductor material result in reduction of both time and cost of fabrication of the microwave diode. Two types of the microwave diodes were produced during the same technological run: one demonstrating ohmic features, and the other having Schottky junction-like characteristics. The Schottky-like diodes exhibited higher sensitivity and higher operational speed, while the ohmic ones had wider dynamic range suitable for microwave power measurements.eng
dc.formatPDF
dc.format.extentp. 1037-1042
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.ispartofseriesBook Series: Progress in Electromagnetics Research Symposium 1559-9450
dc.relation.isreferencedbyScopus
dc.relation.isreferencedbyConference Proceedings Citation Index - Science (Web of Science)
dc.relation.isreferencedbyIEEE Xplore
dc.subjectMC02 - Elektros ir elektroniniai įrenginiai bei sistemos / Electrical and electronic devices and systems
dc.titlePulsed microwave sensor on heavily doped semiconductor substrate
dc.typeStraipsnis konferencijos darbų leidinyje Web of Science DB / Paper in conference publication in Web of Science DB
dcterms.references10
dc.type.pubtypeP1a - Straipsnis konferencijos darbų leidinyje Web of Science DB / Article in conference proceedings Web of Science DB
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras Vilniaus Gedimino technikos universitetas
dc.contributor.institutionValstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.contributor.facultyMechanikos fakultetas / Faculty of Mechanics
dc.contributor.facultyElektronikos fakultetas / Faculty of Electronics
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.researchfieldT 006 - Energetika ir termoinžinerija / Energy and thermoengineering
dc.subject.ltspecializationsL104 - Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies
dc.subject.enMicrowave sensor
dc.subject.enSemiconductor substrate, Microwave detection
dc.subject.enHot carriers
dc.subject.enResponsivity
dc.subject.enDiode
dcterms.sourcetitle2017 Progress in electromagnetics research symposium (PIERS 2017) : Singapore, 19-22 November, 2017
dc.publisher.nameIEEE
dc.publisher.citySingapore
dc.identifier.doiWOS
dc.identifier.doiScopus
dc.identifier.doi10.1109/PIERS-FALL.2017.8293286
dc.identifier.elaba26485792


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