Mikrobangų detektavimas asimetriškai susiaurintais puslaidininkių dariniais: jautris ar atsparumas
Santrauka
We present comparative analysis of voltage sensitivity and burn-out resistance of asymmetrically shaped hot carrier microwave diodes fabricated on the base of silicon and gallium arsenide. It is shown, that increase of sensitivity leads to deterioration of the diodes' reliability.