• Lietuvių
    • English
  • English 
    • Lietuvių
    • English
  • Login
View Item 
  •   DSpace Home
  • Mokslinės publikacijos (PDB) / Scientific publications (PDB)
  • Moksliniai ir apžvalginiai straipsniai / Research and Review Articles
  • Straipsniai Web of Science ir/ar Scopus referuojamuose leidiniuose / Articles in Web of Science and/or Scopus indexed sources
  • View Item
  •   DSpace Home
  • Mokslinės publikacijos (PDB) / Scientific publications (PDB)
  • Moksliniai ir apžvalginiai straipsniai / Research and Review Articles
  • Straipsniai Web of Science ir/ar Scopus referuojamuose leidiniuose / Articles in Web of Science and/or Scopus indexed sources
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Phase characteristics of models of GaAs gyroelectric waveguides with temperature sensitive anisotropic dielectric layers in case of one layer

Thumbnail
View/Open
2492-9231-1-PB.pdf (651.5Kb)
Date
2018
Author
Plonis, Darius
Katkevičius, Andrius
Belova-Plonienė, Diana
Metadata
Show full item record
Abstract
Models of open cylindrical multilayer gyroelectric-anisotropic-gyroelectric waveguides are presented in this paper. The influence of density of free carriers, temperature and the presence of the external dielectric layer on the wave phase characteristics of the models of n-GaAs waveguides has been evaluated. Differential Maxwell’s equations, coupled mode and partial area methods have been used to obtain complex dispersion equation of the models of gyroelectric-anisotropic-gyroelectric waveguides with or without the temperature sensitive external anisotropic dielectric layer. The analysis has shown that the phase characteristics are practically unchanged when the density of electrons is equal to N = (1017 –5·1018) m–3, d/rs = 0, the changes of wave phase coefficients are obtained in the models of waveguides with the external anisotropic dielectric layer. The largest differences of wave phase coefficient are obtained when the density of electrons is N = 1021 m–3. The external dielectric layer improves the control of gyroelectric n-GaAs waveguides with temperature.
Issue date (year)
2018
URI
https://etalpykla.vilniustech.lt/handle/123456789/122545
Collections
  • Straipsniai Web of Science ir/ar Scopus referuojamuose leidiniuose / Articles in Web of Science and/or Scopus indexed sources [7946]

 

 

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjects / KeywordsInstitutionFacultyDepartment / InstituteTypeSourcePublisherType (PDB/ETD)Research fieldStudy directionVILNIUS TECH research priorities and topicsLithuanian intelligent specializationThis CollectionBy Issue DateAuthorsTitlesSubjects / KeywordsInstitutionFacultyDepartment / InstituteTypeSourcePublisherType (PDB/ETD)Research fieldStudy directionVILNIUS TECH research priorities and topicsLithuanian intelligent specialization

My Account

LoginRegister