Advanced materials for light emitting diodes: noise characterisation

Abstract

Comprehensive investigation of optical and electrical characteristics of nitride-based (InGaN) light emitting diodes (LEDs), and comparison of the results with those for phosphide-based (AlInGaP) are presented. The main attention was pointed to investigation of the optical and electrical fluctuations and their correlation. It is shown that correlation factor between optical and electrical fluctuations is very sensitive to device defectiveness.