Analyses of the gyroelectric plasma rod waveguide

Abstract

Semiconductor rod waveguides are widely used in the large variety of devices. Scientists and engineers have been investigating circular cylindrical waveguides for many years due to their excellent electrodynamical characteristics (e.g. a large broad bandwidth) and the wide possibilities for their implementation in microwave and optoelectronic devices as well as solid-state electronics. Here we present an electrodynamical analysis of the n-InSb semiconductor rod waveguide. The waveguide radius is r = 1.5 mm and the electron concentration of the semiconductor n-InSb is N = 1019 m-3. We have admitted that electrophysical parameters of n-InSb are the following: the relative permittivity of lattice epsiv L = 17.8, an effective mass m* = 0.014 mel, the mobility of the electrons μ el = 60 m2/(V middot s). The magnetic induction B0 of the external constant magnetic field is equal to 0.9 T. We present here the dispersion characteristics and the electric field distributions of modes propagating in the n-InSb waveguide.