Electric field distributions in the cross-sections of the sic hollow-core waveguides

Abstract

The SiC material can be used in wide area of applications. Silicon is the material that dominates in the electronics industry today. A change of technology from silicon to silicon carbide is going to revolutionize the power electronics. So the SiC power devices are beginning to be commercialized nowadays [1]. Hollow-core (HC) waveguides have excellent properties. For instance, HC waveguides can be used for high power lasers, no end reflections and small beam divergence [2]. We have investigated a hollow-core cylindrical SiC waveguide. The investigations were made at different temperatures. The permittivity of the SiC material depends on the temperature. The values of temperatures were taken from [3]. We have calculated the dispersion characteristics and the electric field distributions of the hollow-core SiC waveguide with radius r = 1 mm. It should be accented that all our calculations were made taking into account waveguide material losses.