Optical response of the graded-gap AlxGa1-xAs X-ray detector

Abstract

It has been observed that only a part of the AlxGa1−xAs graded-gap layer with the energy gap gradient g>20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30–50 m. To increase the detectors optical response efficiency, the following methods are proposed and tested: 1. Reflection of the X-ray luminescence light, generated in the bulk AlxGa1−xAs layer, inside the total reflection angle ; 2. Optical stimulation of the electron–hole radiative recombination.