| dc.contributor.author | Pozela, K. | |
| dc.contributor.author | Pozela, J. | |
| dc.contributor.author | Dapkus, Leonas | |
| dc.contributor.author | Jasutis, Vytautas | |
| dc.contributor.author | Šilėnas, Aldis | |
| dc.contributor.author | Smith, K. M. | |
| dc.contributor.author | Bendorius, Rimgaudas Adolfas | |
| dc.date.accessioned | 2023-09-18T18:35:28Z | |
| dc.date.available | 2023-09-18T18:35:28Z | |
| dc.date.issued | 2001 | |
| dc.identifier.other | (BIS)VGT02-000002688 | |
| dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/129642 | |
| dc.description.abstract | It has been observed that only a part of the AlxGa1−xAs graded-gap layer with the energy gap gradient g>20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30–50 m. To increase the detectors optical response efficiency, the following methods are proposed and tested: 1. Reflection of the X-ray luminescence light, generated in the bulk AlxGa1−xAs layer, inside the total reflection angle ; 2. Optical stimulation of the electron–hole radiative recombination. | eng |
| dc.format.extent | p. 58-62 | |
| dc.format.medium | tekstas / txt | |
| dc.language.iso | eng | |
| dc.title | Optical response of the graded-gap AlxGa1-xAs X-ray detector | |
| dc.type | Straipsnis Web of Science DB / Article in Web of Science DB | |
| dc.type.pubtype | S1 - Straipsnis Web of Science DB / Web of Science DB article | |
| dc.contributor.institution | Puslaidininkių fizikos institutas | |
| dc.contributor.institution | University of Glasgow | |
| dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
| dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
| dc.subject.researchfield | N 002 - Fizika / Physics | |
| dcterms.sourcetitle | Nuclear instruments and methods in physics research | |
| dc.publisher.name | Elsevier | |
| dc.publisher.city | Amsterdam | |
| dc.identifier.elaba | 3581354 | |
