| dc.contributor.author | Bumelienė, Skaidra | |
| dc.contributor.author | Ašmontas, Steponas | |
| dc.contributor.author | Gradauskas, Jonas | |
| dc.contributor.author | Jukna, Artūras | |
| dc.contributor.author | Paršeliūnas, Jonas | |
| dc.contributor.author | Seliuta, Dalius | |
| dc.contributor.author | Sužiedėlis, Algirdas | |
| dc.contributor.author | Valušis, Gintaras | |
| dc.date.accessioned | 2023-09-18T18:35:33Z | |
| dc.date.available | 2023-09-18T18:35:33Z | |
| dc.date.issued | 2001 | |
| dc.identifier.other | (BIS)VGT02-000002699 | |
| dc.identifier.uri | https://etalpykla.vilniustech.lt/handle/123456789/129656 | |
| dc.description.abstract | We report the results of experimental study of infrared radiation detection in a bulk of compensated germanium. Au or Ni with deep levels in the forbidden energy gap was used as compensating impurities. In spite of great difference in their activation energies the change of electrical resistance of the samples under CO2 laser illumination indicated the similar rise of carrier density in the valence band which can not be explained only by means of direct hole activation from these levels. The DC measurements have shown the activation character of the electrical conductivity of compensated semiconductors. Evaluation of spatial quantity of in-homogenates in compensated semiconductors confirmed the importance of energetic bands bending due to the existence of ionised impurities complexes for infrared detection. | eng |
| dc.format | PDF | |
| dc.format.extent | p. 87-90 | |
| dc.format.medium | tekstas / txt | |
| dc.language.iso | eng | |
| dc.relation.isreferencedby | ISI Proceedings (nenaudotinas) | |
| dc.title | CO2 laser radiation detection in compensated germanium | |
| dc.type | Straipsnis konferencijos darbų leidinyje Web of Science DB / Paper in conference publication in Web of Science DB | |
| dcterms.references | 10 | |
| dc.type.pubtype | P1a - Straipsnis konferencijos darbų leidinyje Web of Science DB / Article in conference proceedings Web of Science DB | |
| dc.contributor.institution | Puslaidininkių fizikos institutas | |
| dc.contributor.institution | Vilniaus Gedimino technikos universitetas Puslaidininkių fizikos institutas | |
| dc.contributor.institution | Vilniaus Gedimino technikos universitetas | |
| dc.contributor.faculty | Fundamentinių mokslų fakultetas / Faculty of Fundamental Sciences | |
| dc.subject.researchfield | N 002 - Fizika / Physics | |
| dc.subject.en | CO2 laser radiation detection | |
| dc.subject.en | Carrier heating | |
| dc.subject.en | Deep levels in semiconductors | |
| dcterms.sourcetitle | Proceedings of SPIE: Nonresonant laser-matter interaction (NLMI-10), 21-23 August 2000, St. Petersburg-Pushkin, Russia | |
| dc.description.volume | Vol. 4423 | |
| dc.publisher.city | Bellingham: SPIE-INT Soc Optical Engineering, 2001 | |
| dc.identifier.doi | 10.1117/12.431207 | |
| dc.identifier.elaba | 3581813 | |
