Current–Voltage Characteristic and Parameters of the Current Filament Region of an Amorphous Gallium Telluride–Crystalline Silicon Barrier Negistor Structure

Abstract

The transient I–V characteristic of an amorphous GaTe3–crystalline n-Si barrier negistor structure under negative differential resistance (NDR) conditions is studied. The basic parameters (cross-section radius, current density, and resistivity) of the current filament region in the amorphous layer of the structure are determined. Results obtained are compared with the associated parameters of the current filament in a C–amorphous GaTe3–C reference barrier-free structure. Under NDR conditions, the conductivity of the filament region in this heterostructure is shown to be governed largely by processes occurring in the crystalline component.