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CO2 laser induced hot carrier photoeffect HgCdTe

dc.contributor.authorAšmontas, Steponas
dc.contributor.authorGradauskas, Jonas
dc.contributor.authorSeliuta, Dalius
dc.contributor.authorSužiedėlis, Algirdas
dc.contributor.authorŠirmulis, E.
dc.contributor.authorValušis, Gintaras
dc.contributor.authorTetyorkin, V.V.
dc.date.accessioned2023-09-18T18:50:15Z
dc.date.available2023-09-18T18:50:15Z
dc.date.issued2002
dc.identifier.other(BIS)VGT02-000004815
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/132480
dc.description.abstractWe present the first experimental evidence of fast hot carrier photosignal over HgCdTe p-n junction induced by high intensity CO2 laser pulses. The signal polarity is opposite to that of an ordinary photovoltaic emf. The hot carrier photosignal manifests itself when the ordinary photovoltage gets saturated or the junction is forward-biased. The dependencies of the photosignal on laser intensity and applied bias voltage are studied.eng
dc.format.extentp. 147-150
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyConference Proceedings Citation Index (nenaudotinas)
dc.source.urihttp://www.scientific.net/MSF.384-385.147
dc.titleCO2 laser induced hot carrier photoeffect HgCdTe
dc.typeStraipsnis konferencijos darbų leidinyje Web of Science DB / Paper in conference publication in Web of Science DB
dcterms.accessRightsIDS Number: BT94U
dcterms.references8
dc.type.pubtypeP1a - Straipsnis konferencijos darbų leidinyje Web of Science DB / Article in conference proceedings Web of Science DB
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionPuslaidininkių fizikos institutas Vilniaus Gedimino technikos universitetas
dc.contributor.institutionFizikos institutas
dc.contributor.institutionNational Academy of Sciences of Ukrain
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldT 001 - Elektros ir elektronikos inžinerija / Electrical and electronic engineering
dc.subject.enHot carriers
dc.subject.enHgCdTe
dc.subject.enInfrared laser
dc.subject.enP-n junction
dc.subject.enPhotovoltage
dcterms.sourcetitle11th International Symposium on Ultrafast Phenomena in Semiconductors Vilnius, Lithuania, Aug 27-29, 2001
dc.description.volumeVol. 384-385
dc.publisher.nameTrans Tech. Publications LTD
dc.publisher.cityTotton
dc.identifier.elaba3615877


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