Innovative photo-electrochemical porous silicon technology for solar cell application

Abstract

The unique so-called porous silicon technology feature have been applied at first to modify of the silicon cells to increase its efficience, while creating a buried structure in the solar cell emitter volume. It was shown that the proposed modification technique improving the current-voltage characteristic properties and solar cell efficiency in the case of porous structure not reaching p-n junction. The solar cell maximum power was increased from 3 to 4.5 times in defferent parts of the optical spectrum of solar cell sample modified by buried porous silicon structure. The proposed buried porous silicon sturcture has the additional advantage because it no hinder to apply usual antiflacting and protective coating on the solar cell surface.