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Terahertz emission from p-lnAs due to the instantaneous polarization

dc.contributor.authorAdomavičius, Ramūnas
dc.contributor.authorUrbanovič, Andžej
dc.contributor.authorMolis, Gediminas
dc.contributor.authorKrotkus, Arūnas
dc.contributor.authorŠatkovskis, Eugenijus
dc.date.accessioned2023-09-18T19:09:11Z
dc.date.available2023-09-18T19:09:11Z
dc.date.issued2004
dc.identifier.issn0003-6951
dc.identifier.other(BIS)VGT02-000008332
dc.identifier.urihttps://etalpykla.vilniustech.lt/handle/123456789/136123
dc.description.abstractTerahertz radiation from differently doped n- and p-type InAs crystal surfaces was investigated by time-resolved measurement. Large increase of the emitted terahertz power has been observed for p-InAs samples with the p-doping levels of approximately 1016–1017 cm–3. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in this layer.eng
dc.formatPDF
dc.format.extentp. 2463-2465
dc.format.mediumtekstas / txt
dc.language.isoeng
dc.relation.isreferencedbyGeoRef
dc.relation.isreferencedbyChemical abstracts
dc.relation.isreferencedbyCompendex
dc.relation.isreferencedbyScience Citation Index Expanded (Web of Science)
dc.relation.isreferencedbyScience Citation Index
dc.source.urihttp://scitation.aip.org/content/aip/journal/apl/85/13/10.1063/1.1795980
dc.titleTerahertz emission from p-lnAs due to the instantaneous polarization
dc.typeStraipsnis Web of Science DB / Article in Web of Science DB
dcterms.references11
dc.type.pubtypeS1 - Straipsnis Web of Science DB / Web of Science DB article
dc.contributor.institutionPuslaidininkių fizikos institutas
dc.contributor.institutionVilniaus Gedimino technikos universitetas
dc.contributor.facultyFundamentinių mokslų fakultetas / Faculty of Fundamental Sciences
dc.subject.researchfieldN 002 - Fizika / Physics
dc.subject.ltTerahercinė spinduliuotė
dc.subject.ltSiauratarpiai puslaidininkiai
dc.subject.ltOptinis lyginimas
dc.subject.enTerahertz radiation
dc.subject.enNarrow gap semiconductors
dc.subject.enOptical rectification
dcterms.sourcetitleApplied Physics Letters
dc.description.issueno. 13
dc.description.volumeVol. 85
dc.publisher.nameAmerican Institute of Physics
dc.publisher.cityNew York
dc.identifier.doiLBT02-000012567
dc.identifier.doi10.1063/1.1795980
dc.identifier.elaba3669570


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