Terahertz emission from p-lnAs due to the instantaneous polarization

Abstract

Terahertz radiation from differently doped n- and p-type InAs crystal surfaces was investigated by time-resolved measurement. Large increase of the emitted terahertz power has been observed for p-InAs samples with the p-doping levels of approximately 1016–1017 cm–3. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in this layer.